The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, we report through-silicon via (TSV) Cu filling failure modes and categorize them into three major regions based on their causes. First, Si etch-related region for the TSV defining. Si etch defects, such as bottom corner notch, Si grass at the bottom, surface roughness, and sponge-like defect, cause Cu seed layer loss at the defect areas. It causes electrical disconnection resulting...
The step coverage of a Cu seed layer is one of critical factors to be controlled in order to achieve void-free TSV for 2.5D and 3D IC. The step coverage of a Cu seed layer can be changed by aging of the Cu seed layer with time and there are two mechanisms in its aging. The one was the oxidation of a Cu seed layer which can change the step coverage by changing the actual thickness of the Cu seed layer...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.