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This paper reports a dual-band radio frequency (RF) high-efficiency power amplifier (PA) employing 0.25 μm gallium nitride (GaN) technology for multi-band transmitter applications. The hybrid PA simultaneously covers 2-distinct telemetry bands, L (1.435–1.85 GHz) and C (5–5.15 GHz). The concurrent PA has a simulated large signal gain of 12.5 dB, saturated output power (Pout) of 35.5 dBm, and power...
Wide-band digital drivers are indispensable for SMPAs (Switched Mode Power Amplifiers) in PWM (Pulse Width Modulation) and PPM (Pulse Position Modulation) applications. This paper presents the design of a wideband RF pre-amplifying buffer, innovated for very low dropout and low power complementary operation in heterojunction technologies affording only depletion type devices. A simple, passive bias...
An ultra wideband LC voltage-controlled oscillator (LC-VCO) operating in the Ka-band with equally spaced sub-band coarse tuning characteristics is proposed and characterized. A tunable negative capacitance (TNC) circuit technique is used to cancel the fixed capacitance in the LC-tank to extend the tuning range (TR). A digitally-switched varactor coarse tuning structure with an inductance redistribution...
The continued scaling of digital CMOS technology has enabled mm-Wave VCOs with record figures of merit [1–5]. This is mainly driven by the increase in cutoff frequency and decrease in power consumption brought by lower supply voltages. However, at mm-Wave, challenges such as low Q-factor of the tuning varactors and switched capacitors result in a sharp degradation in the resonator Q. For an NMOS LC-VCO...
We present an experimentally validated capacitance cancellation structure to increase the tuning range (TR) of voltage-controlled oscillators (VCOs) with minimal phase noise or power impact. The cancellation is based on an ultrawideband differential active negative-capacitance (NC) circuit. An NC scheme suitable for bottom-biased VCOs is analyzed and combined with a CMOS VCO to cancel the fixed...
An ultra wideband MMIC low noise amplifier (LNA) based on the 0.15-μm pHEMT 3MI Triquint power process has been demonstrated. A feedforward noise cancellation technique was employed to reduce the thermal noise in the LNA. The LNA has a surface area of 2 mm by 2 mm. The gain of LNA is 15 dB between 400 MHz and 12.5 GHz with ±0.3dB gain flatness across the band. The return loss at both input and output...
Negative capacitance (NC) circuits of single-ended and differential topologies are presented, analyzed and characterized. The novel NC designs extend the bandwidth of conventional NC circuits while maintaining low power consumption. To compare the performance of the designs, a figure of merit (FOM) is proposed. A power and area efficient NC scheme employing a 130 nm CMOS technology is applied to a...
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