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The electronic band structures and optical gains of Ge/SixSnyGe1−x−y truncated pyramid-shaped quantum dots (QDs) are calculated using the 8-band k.p model. The large bowing factors in the calculation of band gaps of both Ã-conduction and L-conduction valley in the barrier are considered so that the band gaps of the barrier are small. The strains are calculated by constant strain method and valence...
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