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We have carried out 3D Non-Equilibrium Green Function simulations of a junctionless gate-all-around n-type silicon nanowire transistor of 4.2 × 4.2 nm2 cross-section. We model the dopants in a fully atomistic way. The dopant distributions are randomly generated following an average doping concentration of 1020 cm-3. Elastic and inelastic Phonon scattering is considered in our simulation. Considering...
Statistical variability associated with discreteness of charge and granularity of matter is one of limiting factors for CMOS scaling and integration. The major MOSFET statistical variability sources and corresponding physical simulations are discussed in detail. Direct statistical parameter extraction approach is presented and the scalability of 6T and 8T SRAM of bulk CMOS technology is investigated...
In this paper, using computationally intensive 3-D simulations in a grid computing environment, we perform a detailed study of line-edge-roughness (LER)-induced threshold voltage variability in contemporary MOSFETs. Statistical ensembles of tens of thousands transistors have been simulated. Our analysis has been predominantly performed on a 35-nm channel-length bulk MOSFET test bed, widely used in...
We study, in detail, statistical threshold voltage variability in a state of the art n-channel MOSFET introduced by line edge roughness. A large sample of 35,000 transistors with microscopically different LER patterns was simulated using the Glasgow 3D `atomistic' device simulator. Such large-scale simulation has been enabled by advanced grid computing technology. The results show that the statistical...
The UK Engineering and Physical Sciences Research Council (EPSRC) funded project ??Meeting the Design Challenges of nanoCMOS Electronics?? (nanoCMOS) is developing a research infrastructure for collaborative electronics research across multiple institutions in the UK with especially strong industrial and commercial involvement. Unlike other domains, the electronics industry is driven by the necessity...
The EPSRC pilot project Meeting the Design Challenges of nanoCMOS Electronics (nanoCMOS) is focused upon delivering a production level e-Infrastructure to meet the challenges facing the semiconductor industry in dealing with the next generation of 'atomic-scale' transistor devices. This scale means that previous assumptions on the uniformity of transistor devices in electronics circuit and systems...
Increasing CMOS device variability has become one of the most acute problems facing the semiconductor manufacturing and design industries at, and beyond, the 45 nm technology generation. Most problematic of all is the statistical variability introduced by the discreteness of charge and granularity of matter in transistors with features already of molecular dimensions [i]. Two transistors next to each...
As the fabrication process technology has moved from submicron to deep submicron region, it has become essential to minimize the leakage power and the variability of the design parameters such as delay and leakage. Although dual-Vt approach has been proposed for runtime leakage power reduction significantly without compromise in performance, it suffers from the limitation of complex fabrication process...
As the fabrication process technology is moving from submicron region to deep submicron or nanometer region, the impact of process parameter variations are becoming more and more dominant, increasing the loss in yield due to variations in leakage power and delay. As a consequence, parametric yield loss has become a serious concern of the fabrication houses. This has opened up a challenge to the designers'...
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