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InP-based resonant tunneling diodes with symmetrical I/V-characteristics have shown their excellent high frequency performance for THz signal generation. For signal detection we present a device with an additional third barrier to create an unsymmetrical I/V-characteristic. Sensitivity measurements are performed and further improvements by scaling of the active device area are discussed. To allow...
We present an asymmetrical InP-based three barrier resonant tunneling diode with high current density. For positive bias voltages the device operates like a symmetrical resonant tunneling diode, providing a wide region of negative differential resistance. Under zero bias condition it can be used as a sensitive high frequency detector. The nonlinearity may also enable high frequency mixer applications.
InP-based resonant tunneling diodes with symmetrical I/V-characteristics have shown their excellent high frequency performance for THz signal generation. We present a modification with an additional third barrier to create an unsymmetrical I/V-characteristic. With their large current densities and low capacitances these devices are promising candidates for zero bias high frequency envelope detectors...
This paper presents an optimized RTD-HBT single ended voltage controlled oscillator topology with increased tuning range and improved frequency stability at 20 GHz oscillation frequency. By connecting the RTD to the emitter of an HBT, a larger voltage swing at the parallel resonator compared to the direct connection can be achieved. In addition the RTD-capacitance influence on the oscillation frequency...
In this paper, a 50-μm-pitch coplanar waveguide pattern for on-wafer high-frequency measurements on nanowire FET is used. The contact structure exhibits relatively large parasitic elements in comparison to the intrinsic device making a precise deembedding both necessary and challenging. A single InAs nanowire FET with a large gate length of 1.4 μm possesses after deembedding a maximum stable gain...
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