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Results of a numeral calculation of superficial currents are brought in conducting films at diffraction of the electromagnetic fields on metal dielectric structures in a waveguide.
Results of estimated calculations of energy and time necessary for fusion of a metal film of the metal-dielectric structure under influence of powerful electromagnetic fields are resulted.
On the basis of numerically-analytical model of influence of powerful electromagnetic fields on film metal-dielectric structures are obtained distributions of currents of displacement and conductivity.
The article contains results of research of influence of bias current on Schotki FET resistibility in pulse electromagnetic fields. The basic relations used for direct calculation of bias current in FET model GaAs are given.
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