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We report Multi-Valley-Multi-Subband Monte Carlo simulations of the velocity-field curves in bulk and thin film InAs, GaAs and In0.53Ga0.47As. Our model suggests that surface roughness scattering reduces the saturation velocity of nanometer-scale films significantly below the corresponding Silicon value. The injection velocity, instead, remains larger than for Silicon down to small film thickness...
The Tunnel-FET (TFET) device is a gated reverse biased p-i-n junction whose working principle is based on the quantum mechanical Band-to-Band Tunneling (B2BT) mechanism [1]. The OFF-ON transition can be much more abrupt than for conventional MOSFETs, thus allowing a reduction of the supply voltage and power consumption in logic applications [2]. Several TFETs with point Subthreshold Swing (SS) lower...
In this work a non-local band-to-band tunnelling model has been implemented into a full-band Monte Carlo simulator. Two different approaches for the choice of the tunnelling path have been implemented and their impact on the transfer characteristics of different Tunnel FET structures is investigated. In both the SOI and the DG TFET architectures we have simulated, up to 1 order of magnitude of underestimation...
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