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New scheme of quantum-well-intermixing (QWI) enhancement is proposed for SOA/EAM integration. Using supercritical-fluid, QWI can be performed at low temperature regime, leading to 10dB improvement in optical modulation. 13dB modulation, 17dB gain and >15GHz f-3dB were observed in 100μm long EAM, confirming simple integration scheme.
High-bandgap offset 1300nm InAlGaAs quantum well (QW) has been used for electroabsorption modulator. High conduction/valance bandgap offset ratio allows strong exciton effect under high electric field, leading to broadband operation. >10dB extinction ratio from 1280nm to 1320nm and 40GHz of electical-to-optical response has been demonstrated.
A new high-speed 1300nm directly modulated DFB laser with high power has been demonstrated. With low parasitic capacitance of coplanar electrodes, 25mW has been obtained in a long waveguide, while maintaining high-speed performance. 50Gb/s PAM-4 modulation over 35km transmission without amplification has been realized with low degradation.
Nonlinear wavelength generations by using the optical waveguides are more compact, low cost, and efficient than using the traditional solid state systems [1], and the generated broadband light sources can be utilized in optical coherence tomography, frequency metrology, optical communications, and many other. In this work, the high quality of tantalum pentoxide (Ta2O5) micro-ring resonator has been...
All-optical processing and generation are regarded as a key solution to achieve ultrahigh bitrate communication in next generation. Silicon based optical waveguides have been widely developed, including ultrafast electrical-optical modulator, splitter, wavelength generator, and etc. However, the carrier relaxation issues as well as inevitable two-photon absorption in communication regions limit its...
The zinc oxides (ZnO) films with different bismuth (Bi) doping were prepared by spray pyrolysis deposition at 450°C with aqueous solution contained zinc acetate and bismuth nitrate precursors. Under ultra-violate light illumination, the photodegradation of methyl orange for these ZnO films were studied. In the singly doped ZnO, the 5% Bi doped ZnO shows the relatively high photocatalytic activity...
Optical modulation with pre-chirp control using electro-absorption modulator (EAM) and its integration have been reviewed. Device design, fabrication, and application of high-speed chirp-control intensity modulation are also discussed for OOK and OFDM modulation scheme.
A new electroabsorption modulator (EAM) has been demonstrated using quantum well intermixing (QWI) method. Through local area of QWI, 110nm wavelength blue shift was attained in strip pattern of SiO2 deposition, forming optical waveguide structure and also leading to sensitive and efficiency voltage-driven optical modulation.
The low-loss and CMOS compatible Ta2O5 based optical waveguide has been demonstrated. The quality factor of 50,000 in the Ta2O5 micro-ring resonator is fabricated. Moreover, the four-wave-mixing has been realized in the submicron Ta2O5 channel waveguide.
A new quantum well, namely InGaAsP/InAlGaAs, is used for electroabsorption modulator. High band-offset ratio between well and barrier induces strong exciton effect, leading to low fiber-to-fiber loss of −8dB, >25dB extinction ratio, and >30GHz bandwidth.
The crack-free and low surface roughness of Ta2O5 film has been deposited by magnetron sputtering technique. The propagation loss of 1.5 dB/cm with the total coupling loss of 3.2 dB for the Ta2O5 based channel waveguide with inverse taper structure has been successfully demonstrated.
Design for high-speed and high-extinction ratio electroabsorption modulator (EAM) has been presented and reviewed. Based on waveguide structure, reducing both parasitic capacitance and cladding impedance can enhance the microwave performance and bandwidth of EAM. With selective undercut etching active region, low optical as well as microwave loss can be attained to further improve EAM modulation....
Using a single cascaded EAM, we demonstrate 13.5-Gbps IM/DD-OFDM transmission over 0∼200-km without distance-dependent bit-loading. Dispersion-induced fading and nonlinear distortion in conventional IM/DD systems are settled by novel single-sideband modulation and SSII cancellation schemes, respectively.
Using local quantum-well-intermixing and cascaded-integration technique, a high-transmission broadband EAM-integrated SOA is demonstrated. Above 20dB-enhancement optical transmission, 57nm wavelength shift in electro-luminance, and 40Gb/s performance are observed, enabling regrowth-free local bandgap engineering in integration template.
In this work, the nonlinear saturable absorption of topological insulator Bi2Te3 and application in solid-state pulsed laser have been investigated. The highly sensitive saturable absorption of few 2.0 W/cm2 and stable Q-switching operation were investigated and achieved in a 1.0 μm Nd:YVO4 laser as the threshold absorbed pump power was only 31 mW. This is the lowest in passively Q-switched solid-state...
Enabled by negative-chirped EAM-SOA, we successfully demonstrate 23-Gbps OFDM transmission in the range of 60∼100 km without adaptive bit- and/or power-loading. This distance-insensitive performance reveals the feasibility of simple and efficient OFDMA LR-PON.
This paper presents the coding techniques of Decoder-side Motion Vector Derivation (DMVD) and Adaptive Loop Filter (ALF) to apply on the state-of-the-art High Efficiency Video Coding (HEVC) standard. Both DMVD and ALF can provide the improvement of coding efficiency on HEVC test Model (HM) reference software, which are reported in multiple proposals during the development period of HEVC. In DMVD algorithm,...
A novel scheme of all-optical pattern free 2R regeneration is demonstrated through monolithically integration of EAM and SOA. In comparison to Back-to-back case, a clearer 40Gb/s eye-diagram with 2dB improvement is obtained.
In this paper, an InGaAsP/InGaAlAs high-band-offset quantum well for high-speed all-optical wavelength conversion is reviewed. Due to large band offset ratio between electron and heavy hole, InGaAsP/InGaAlAs multiple quantum well can have short carrier sweeping time under electric field from low hole band offset. Large than 33GHz of all-optical frequency response is demonstrated under high bias, confirming...
Progress of high-speed low-driving-power EAM has been reviewed, where microwave design issues have been addressed. Low power with less than 1Vpp and above 40Gb/s operation has been attained from special design of waveguide structure.
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