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New scheme of quantum-well-intermixing (QWI) enhancement is proposed for SOA/EAM integration. Using supercritical-fluid, QWI can be performed at low temperature regime, leading to 10dB improvement in optical modulation. 13dB modulation, 17dB gain and >15GHz f-3dB were observed in 100μm long EAM, confirming simple integration scheme.
High-bandgap offset 1300nm InAlGaAs quantum well (QW) has been used for electroabsorption modulator. High conduction/valance bandgap offset ratio allows strong exciton effect under high electric field, leading to broadband operation. >10dB extinction ratio from 1280nm to 1320nm and 40GHz of electical-to-optical response has been demonstrated.
A new high-speed 1300nm directly modulated DFB laser with high power has been demonstrated. With low parasitic capacitance of coplanar electrodes, 25mW has been obtained in a long waveguide, while maintaining high-speed performance. 50Gb/s PAM-4 modulation over 35km transmission without amplification has been realized with low degradation.
The low-loss and CMOS compatible Ta2O5 based optical waveguide has been demonstrated. The quality factor of 50,000 in the Ta2O5 micro-ring resonator is fabricated. Moreover, the four-wave-mixing has been realized in the submicron Ta2O5 channel waveguide.
A new quantum well, namely InGaAsP/InAlGaAs, is used for electroabsorption modulator. High band-offset ratio between well and barrier induces strong exciton effect, leading to low fiber-to-fiber loss of −8dB, >25dB extinction ratio, and >30GHz bandwidth.
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