The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We report on Gallium Nitride Self switching Diode used as detector in a terahertz imaging system. We propose to use the ionic implantation to define the nano-channels in the device, leading to an improved sensitivity in the mm-wave/THz regime. Preliminary results are given at 200 GHz.
We report on the first use of a THz detector based on InAs rectifying nanochannels in a communication system. The transmitter is composed of an electronic multiplication chain, externally amplitude modulated at the input signal. The system has been driven at 200 GHz and up to 500 Mbps data signals have been transmitted in an indoor configuration. In contrast to most nanodevices, the InAs detector...
An attempt of exploitation of very high frequency Gunn oscillations to generate a TeraHertz radiation is realized with an asymetric planar GaN self-switching diode. In this work we compare the measured static behavior of real devices with calculations performed by means of Monte Carlo simulations. We analyze the influence of the temperature on the I-V characteristic of the SSD and also on the high...
In this paper we present the advances on the fabrication of THz emitters and detectors obtained within the framework of the European ROOTHz project. Two types of devices are explored, self-switching diodes and slot-diodes, using both narrow bandgap and wide bandgap semiconductors. This broad approach allows us to improve the frequency and power generated by Gunn diodes and the responsivity and noise...
We present electrical rectification up to 300 GHz with novel asymmetric nanochannels realized for the first time on AlGaN/GaN material system. At zero bias, sensivities of 100 V/W/Hz1/2 are obtained at room temperature.
A self-switching diode (SSD) is based on an asymmetric nanochannel. The SSD is fabricated by tailoring the boundary of a narrow semiconductor channel to break its symmetry. An applied voltage V not only changes the potential profile along the channel direction but also either widens or narrows the effective channel width, depending on its sign. This results in a strong nonlinear current-voltage I-V...
A self-switching diode (SSD) is based on an asymmetric nanochannel. The SSD is fabricated by tailoring the boundary of a narrow semiconductor channel to break its symmetry. An applied voltage V not only changes the potential profile along the channel direction but also either widens or narrows the effective channel width, depending on its sign. This results in a strong nonlinear current-voltage I-V...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.