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In this article, the development of a potassium ion sensor based on the fluorinated-HfO2 using fluorine (F19+) ion implantation on Electrolyte-Insulator-Semiconductor (EIS) structure is proposed. To concentrate the F atom within a shallow region on HfO2 sensing membrane surface, relatively low implant power and big tilt angle are chosen. With suitable F19+ implant dosage, the pK sensitivity can be...