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Tunnel field-effect transistors (TFETs) can potentially achieve sub-60-mV/dec SS, but their performance strongly depends on the dopant profile at the tunneling junction. In this paper, very sharp (~.2 nm/dec) optimized tunneling-junction dopant profile for the silicon p-n-p-n TFET is demonstrated by molecular beam epitaxial growth. Devices are fabricated with a low-thermal-budget ( <; 620°C) vertical...
Statistics from various sources indicate that there are roughly 75% cyber attacks occurred in the web applications, and the trend is growing. The unsafe coding of web application or the vulnerability of the application itself is yet to be patched result in a high security risk. In addition to white-box testing to examine the source code, black box testing for vulnerability scan or penetration test,...
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