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We investigated wavelength-control-characteristics of a silicon photonic transmitter employing heater-integrated silicon micro-ring-modulator and flip-chip integrated CMOS driver. A novel wavelength control successfully demonstrated error-free operation at 25 Gbps during wide-package-temperature cycle between 20 and 60ºC for the first time.
We fabricated 25-Gb/s silicon modulators with side-wall gratings on a 300-mm wafer. They exhibited high modulation efficiency of VπL = 0.274 V-cm at 12.5 GHz in forward-biased mode. Equivalent-circuit parameters showed good in-wafer uniformity for stable frequency-compensated operations.
We developed a 25-Gb/s silicon modulator with 9.83-dB·V αVπL, which is smallest of those operated at 25 Gb/s and higher. We used forward-biased diode operations, which enables small VπL with moderately doped low-loss waveguides.
We developed a pin-diode silicon microring modulator that used side-wall grating waveguides. Modulator exhibits 0.28- V·cm-VπL at 25 GHz in forward-biased operation mode. We achieved 50-Gb/s operation at a driving voltage of 1.96 volts-peak-to-peak (Vpp).
We present a 50-Gb/s silicon Mach-Zehnder modulator that uses the shortest 250-µm long phase shifter. A 4.2-dB extinction ratio was obtained at 50 Gb/s with 4.35 V peak-to-peak (Vpp) driving signals and 45-mW power consumption.
We developed a high-speed Mach-Zehnder modulator with the shortest phase shifter (100-μm length) reported so far. Our modulator exhibited 25-Gbps eye-openings with an extinction ratio of 4.3 dB and on-chip insertion loss of 4.7 dB.
A silicon Mach-Zehnder modulator, which has side-wall-grating waveguide, is investigated. Using the fabricated device, 12.5-Gb/s operation was demonstrated. A modulation efficiency (VπL) of 0.29 V·cm was determined from the measured extinction ratio.
The 5×4.2 mm2 chip of the SiC DIMOSFET was fabricated and tested. The drain-source avalanche breakdown voltage without any gate bias (Vgs=0V) is measured to be >1000V. The drain current (Id) >40A is observe under the conditions of Vds=1V and Vgs=+20V. Typical Ron and specific Ron are measured to be 22 mΩ and 3.5 mΩcm2 with Vth=2.3V. The SiC DIMOSFET is introduced into the PE circuits of the...
We have studied the dose effect of silicon as an added element on the trapping of hydrogen in aluminum. For this purpose, we implanted 78 or 150 keV silicon ions into aluminum specimens with doses of 3 x 10 15 -3 x 10 17 Si/cm 2 and successively 30 keV hydrogen ions with a dose of 3 x 10 16 H/cm 2 at 300 K. After the hydrogen implantation, the...
Fabricating shallow p+-n junctions by low energy BF2 implantation, especially using furnace annealing, requires preamorphous implantation of crystalline silicon to eliminate the boron channeling and the suppression of diffusion in heat cycles. A preimplantation technique is presented that uses fluorine to influence the electric characteristics of p-channel MOSFETs. Using heat cycling of 850°C...
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