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Ultra-thin SOI wafer technologies designed for 22/20nm CMOS are presented. It is stressed that planar, non-doped, and fully-depleted (FD) SOI structures are realistic options that not only solve various scaling issues, but also provide simplicity and flexibility in the device process and the circuit design. To realize 22/20nm planar FD-SOI CMOS, 300mm SOI wafer process by Smart Cut™ [1] has been optimized,...
Ultra Thin Body Devices are a way to solve technical challenges requested by advanced digital technology nodes. Combined with planar CMOS approach, they lead to the need for Ultra-Thin SOI (UTSOI) wafers. These 300 mm ultra-thin SOI layer are now available with silicon target thickness at 12 nm, controlled within a few angström range from Wafer to Wafer to Transistor level.Ultra-Thin SOI & BOX...
The current status of SOI technology using wafer bonding is reviewed and its technological positioning in CMOS scaling is discussed. While bulk CMOS technology is encountering various kinds of critical issues, SOI technology using wafer bonding provides unique solutions by virtue of its flexible material design. Mobility enhancement through strained-SOI (sSOI) or optimization of crystal orientation...
The bandgap engineering technique suppresses not only anomalies in the DC transfer characteristics of SOI CMOS circuits but also characteristics fluctuations of SOI MOSFETs. It is experimentally verified that the floating-body effects in 8 k SOI MOSFETs in 0.7 mm/sup 2/ wafer area cannot be controlled completely with a conventional fabrication technique. Thus it is concluded that the suppression of...
Several key technologies;large-area recryatallization technique, viahole-filling, and scaled thin SOI devices, have been prepared for realizing 3D LSI.
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