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Experimental data and a model are presented, and the electric field that appears in porous alumina during electrochemical anodic oxidation of aluminum in electrolytes based on an aqueous solution of oxalic acid at a voltage of 90–250 V is calculated. It is found that the electric field in the layers with a porosity of 1–10% in growing alumina reaches 109–1010 V/m, which exceeds the electric strength...
The design and fabrication technology of integrated optical and electrical interconnects on silicon are developed. The light-emitting diodes in the presented construction are based on nanostructured silicon built in an alumina matrix. The optocouple with the current transforming coefficient of about 1 % is fabricated. The advantages of the developed design are shown in comparison with existing analogues.
Films of Al-Si nanocomposites produced by magnetron evaporation of a complex target onto a silicon substrate have been investigated using scanning electron microscopy, X-ray diffraction, ultrasoft X-ray emission spectroscopy, and X-ray absorption near edge structure spectroscopy. It has been found that silicon inclusions are nanocrystals with the mean size of 20–25 nm, with the surface covered by...
Electric resistance of an aluminum foil was used to monitor its temperature during anodization in the regimes providing porous alumina formation. Current densities higher than 100 mA/cm2 were found to be accompanied by the sample heating several tens of degrees above the electrolyte temperature. Local heating of different regions in the forming porous nanostructured alumina was calculated to show...
The design and technology of manufacturing of optical interconnections on the basis of nanostructured silicon have been developed. The optoelectronic couple with conversion coefficient of current of about 1% has been produced. The possibility of integration of optical and electron interconnections on the silicon chip is demonstrated.
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