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In this paper, we demonstrated the enhancement of thermal stability of nickel germanide (NiGe) alloy up to 600 °C by using titanium nitride (TiN) metal capping. A high ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ ratio of $2.9 \times 10^{5}$ was achieved by capping TiN metal on Ni for NiGe alloy formation at 600 °C. Detailed analyses were performed for realizing...
Compared with the Ni/HfOX device, the Ni/AlOX/HfOX unipolar device exhibits a higher RHIGH and the robust endurance of 10k cycles without any soft-errors. A possible mechanism with filament model is proposed to describe these results. The high operation speed of 40 ns, low operation current possibly down to 10 µA, and stable nonvolatile characteristic at 85 °C in the Ni/AlOX/HfOX device are demonstrated...
The evidence of degraded RHIGH or permanent damage of the device induced by the current overshoot in the forming/SET step is demonstrated and a possible scenario for this result is revealed. Dependence of the overshooting current on the cathodic electrode and device configuration are discussed. Reduction of the overshooting current by a transistor can enhance the memory performances. The devices with...
Although a significant effort was made recently in the development of binary oxide based resistive memory (RRAM), reliability issue is still the most concern, but less addressed. By stressing the device in high resistance state (HRS) with constant voltage of the same bias polarity during SET process, the disturbed time is found to exhibit extreme low Weibull slope (~0.3). This characteristic can drastically...
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