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Design and implementation of a low cost comb generator based on a BJT switching circuit are proposed in this work. The proposed comb generator can produce multiple harmonics with excellent amplitude flatness up to 2 GHz. The output power of each harmonic is −35 dBm at the low frequency end and −41 dBm at the high frequency end. The input of the proposed comb generator is driven by a 10 MHz square...
Power efficiency is a very important specification of power amplifiers for mobile and wireless communication systems. High power efficiency leads to long lasting connection time for mobile, nomadic and wireless devices using battery energy. Especially for public and homeland security applications, long connection time of wireless communication devices is desirable for emergency situations. This paper...
GaN based RF transistors has been drawing interest of many researchers over the recent years due to their advantages e.g. high breakdown voltage, high efficiency, high power density and large bandwidth. They are expected to replace Lateral-Diffused Metal - Oxide Semiconductor field effect transistors (LDMOS FET) that are presently popular power device for wireless and mobile communications but have...
Magnetron power supply is an important part of a microwave heating system. Power control of the magnetron's power supply is desired for microwave heating to enhance performance and to provide system flexibility. The high frequency switching technique in the power supply control is costly and complicated. In another way, pulsing the output power of the magnetron can be simply realized with TRIAC, but...
A class-AB power amplifier was designed for an envelope tracking (ET) application. Class-AB amplifier is widely used in wireless communication systems due to the compromise between linearity and efficiency. As a power device, Cree Gallium Nitride High Electron Mobility Transistor (GaN HEMT) CGH4010F was chosen. The input and output matching networks were designed and simulated with Advanced Design...
Whereas the requirements of communication systems become more stringent, the impacts of memory effects on linearity and efficiency become more noticeable. Memory effects in a communication system arise from several sources. In power amplifier circuits, memory effects are caused by DC supply voltage circuits, matching networks and power devices (transistors). Memory effects of power devices are required...
GaN HEMTs are promising power devices for RF and microwave power applications. However, the performance of devices can be compromised under some operating conditions by charge carrier trapping. From the device development point of view, device optimization is necessary to obtain the best possible performance. For device modeling and design purposes, the device needs to be characterized and modeled...
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