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This paper presents the integration of dense (2.5 1012 CNTs/cm2) Carbon Nanotubes in via structures for future microelectronic interconnects generations. Process steps performed after CNT growth in vias are studied. Two different CNT encapsulation layers are evaluated (ALD Al2O3 and spin on resist). After polishing, well planarized CNTs vias structures are obtained in both cases. Post CMP clean is...
Thanks to their outstanding electrical properties [1,2], carbon nanotubes (CNTs) are promising candidate to replace Cu in advanced interconnects [3–8]. In damascene based CNT via integration scheme, CNTs growth occurs on the whole surface of the wafers: in vias, but also on top surfaces [5]. CNTs on top are subsequently removed by polishing. In this paper, an alternative integration scheme is proposed...
Through Silicon Via (TSV) is a one of the more important bricks for 3D stacking and offer different integration approaches. The via-last approach has been first introduced into production. Yet the via-first approach is also currently actively investigated since it has some advantages particularly the use of high conformal deposition materials for isolation and filling of the TSVs enabling higher density...
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