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In this paper, we describe an electrolyte-insulator-semiconductor (EIS) device prepared from Tm2O3 sensing membranes deposited on Si (100) substrates through reactive sputtering. X-ray diffraction, X-ray photoelectron spectroscopy, and atomic-force microscopy were used to study the chemical and morphological features of these films as functions of the growth conditions (argon-to-oxygen flow ratios...
This work investigates the physical and sensing properties of high-k Yb2O3 sensing thin films deposited on Si substrate by means of reactive sputtering. The Yb2O3 EIS device annealed at 800??C exhibited a high sensitivity of 55.5 mV/pH, a small hysteresis voltage of 3.76 mV, and a low drift rate. This can be explained by the well-crystallized Yb2O3 structure, a thinner silica layer, and a larger surface...
In this paper, we describe the structural and sensing properties of high-k PrY x O y sensing films deposited on Si substrates through reactive co-sputtering. Secondary ion mass spectrometry and atomic force microscopy were employed to analyze the compositional and morphological features of these films after annealing at various temperatures. The electrolyte-insulator-semiconductor...
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