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A reduced emitter doping concentration in deep submicron devices is often observed, if an implanted polysilicon is used as diffusion source for the emitter. The resulting enhanced base width leads to a decrease of the cut-off frequency in devices with narrow emitter widths. In addition, two-dimensional effects have to be taken into account for transistors with submicron dimensions. This work demonstrates...
A reduced emitter doping concentration in silicon bipolar transistors with implanted emitter-polysilicon is often assumed to be the reason for the decrease of cut-off frequency in narrow-emitter devices. Therefore, perimeter effects and doping conditions in transistors with implanted as well as in-situ doped emitter-polysilicon are investigated. Detailed two-dimensional characterization shows that...
The photoresponse of a standard silicon high - speed self - aligned bipolar transistor was analysed. With a sensitivity of 3.2 A/W it is possible to detect modulated laser light up to data rates of 1.25 Gbit/s and by using the transistor in a photo diode mode data rates up to 10 Gbit/s are obtained.
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