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The online measurements of radon in flowing water with high temporal resolution and a lower limit of detection of some Bq/l is of growing interest in environmental research and earth sciences. Promising new fields of application in hydrogeology are the study of exchange and mixing processes and the monitoring of pumping procedures before and during groundwater sampling. A suitable, simple method has...
Controlled sub-nm oxide growth on (100) silicon wafers in a controlled, O2 containing ambient of a LPCVD-polysilicon deposition clustertool is demonstrated. As a comparison, a conventional LPCVD-polysilicon deposition furnace is used which generates a sub-nm oxide during loading the wafers into the heated furnace. For the first time results for different substrate doping levels are presented. Applications...
The diffusion of boron out of polysilicon was investigated. Diffusion and segregation coefficients were determined for furnace annealing and rapid thermal processing. Double polysilicon self-aligned npn bipolar transistors with sub 100 nm base widths were obtained, using the double diffusion technique. Calculations for the optimization of the base pinch resistance are presented. It is shown that base...
Borosilicate glass (SiOB) and its outdiffusion properties were investigated. The outdiffusion of boron can be controlled by using an intermediate oxide layer. Borosilicate glass can be used to realize sub 100 nm base widths for bipolar transistors. By using SiOB instead of TEOS for the spacer of PSA transistors, the base link is improved.
The photoresponse of a standard silicon high - speed self - aligned bipolar transistor was analysed. With a sensitivity of 3.2 A/W it is possible to detect modulated laser light up to data rates of 1.25 Gbit/s and by using the transistor in a photo diode mode data rates up to 10 Gbit/s are obtained.
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