The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
High resolution CMOS image sensor demand is driven by consumer applications like mobile phone or digital still camera. To maintain the image quality, we have to save the signal to noise ratio (SNR) despite the number of photons reduction gathered by the pixel. In this paper, we present how back‐side illumination technology could help to recover signal and how to optimize the process and device in...
This paper presents reliability investigations on specific CMOS transistors for image sensors applications. Reliability tests under sunlight illumination show an ageing effect of the transistors. It is shown that the degradation of the transfer gate structure is linked to a modulation of the conduction path. Modification of the channel position influences the interaction between carriers in the channel...
This paper presents an innovative 3D architecture capable of overcoming pixel miniaturization drawbacks. Back-illuminated photodiodes are realized on a first silicon layer, while readout transistors are located on a second silicon layer. Implications of a sequential integration are evaluated in the perspective of low noise pixel performances with a comprehensive study on: 1/ setting the thermal budget...
This paper presents new reliability investigations on CMOS transistors for active pixels sensors (APS) applications. Reliability tests under sunlight illumination show an ageing effect of the transistors. The dependence of the degradation with light intensity and stress bias has been studied. The use of borderless silicon nitride is suspected to be responsible of this degradation: charges in this...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.