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A new dual chip GCT (Dual-GCT) structure with short transparent anode and corrugated p base region is presented based on a traditional Dual-GCT in this paper. The structural features and operation principle of the new device are analyzed, and the characteristics are studied by ISE simulator. Influences of high temperature on the characteristics are discussed. The research results that the new device...
Structure features and operation mechanism of an injection efficiency controlled (IEC) GCT are analyzed. The influences of temperature on the characteristics of IEC-GCT device are discussed. The blocking, conducting and switching characteristics of IEC-GCT at high temperature is simulated by ISE simulator. The results show that, with the rise of temperature, IEC-GCT blocking voltage increases firstly...
A quasi two-dimension lumped charge model, is presented for a novel power device, injection efficiency controlled gate commutated thyristor. In order to lower modeling complexity of the dual-emitters anode, an equivalent structure with a p+-doping area and a pn+n diode is proposed for a physics-based quasi-2D circuit simulation model. The model was successfully built for device dynamic characteristic...
Temperature performances on gate commutated thyristor characteristics were investigated. The temperature dependency in blocking, on-state and turn-off, have been analyzed. Temperature influence on safe operating area has also been discussed. The results from simulator ISE-TCAD agree well with the proposed theoretic analysis. It shows that the presented temperature dependency mechanism is reasonable...
The influences of temperature on the characteristics of asymmetry gate commutated thyristor (A-GCT) and its safe operating area (SOA) are analyzed. The blocking and conducting characteristics of A-GCT at high temperature is simulated by ISE simulator. The results show that, with the rise of temperature, the blocking voltage increases firstly and then decreases, the leakage current increases remarkably...
The influences of key parameters of the SJ MOSFET on the breakdown voltage (VBR) and conducting resistance (R on) are analyzed by using ISE TCAD simulator. The key parameters include the concentration, width and length of pillar regions. Based on the simulation results, combined with the practical process, two design schemes with the minimal R on and the lowest process cost are proposed. Extraction...
A new GTO structure called the injection efficiency controlled GTO (IEC-GTO) is proposed, and its anode injection efficiency can be controlled via an additional thin oxide layer located in short anode contact region of short anode GTO(SA-GTO). The operation mechanism is analyzed, and the conducting, blocking and switching characteristics are simulated by MEDICI simulator. The results show that injection...
A new GTO structure called the injection efficiency controlled GTO (IEC-GTO) is proposed, and its anode injection efficiency can be controlled via an additional thin oxide layer located in short anode contact region of short anode GTO(SA-GTO). The operation mechanism is analyzed, and the conducting, blocking and switching characteristics are simulated by MEDICI simulator. The results show that injection...
The current transport mechanism of transparent anode in gate commutated thyristor (GCT) was analyzed theoretically and the expression of electron current density was deduced. The switching characteristic of asymmetry GCT was simulated by using MEDICI simulator. The results show that the analysis of current transport mechanism for transparent anode is reasonable. In addition, the structural parameters...
A trench isolation technology is introduced into reverse conducting gate commutated thyristor (RC-GCT), and the design consideration; realization process and features of trench separation region were discussed. The results show that the trench separation used in RC-GCT devices can improve the forward blocking characteristic and reduce remarkably the complexity of process simultaneity, only has a little...
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