The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper we report results on PCM endurance failure characterization. We show that endurance failure is related to SET pulse features and we analyze and model SET operation to obtain a better understanding and improve endurance performance. Results give interesting insights on the crystallization process of GST material. SET obeys to a constant energy law. Fast SET pulses require high power;...
In this paper we present a study of Phase-Change non-volatile Memory (PCM) devices integrating carbon-doped GeTe as chalcogenide material. Carbon-doped GeTe, named GeTeC, remarkably lowers the RESET current and features very good data retention properties as well. In particular, GeTe PCM with 10% carbon inclusions (named GeTeC10%) yields about 30% of RESET current reduction with respect to pure GeTe...
This paper investigates material and electrical properties of a new chalcogenide alloy for Phase-Change Memories (PCM): Carbon-doped GeTe (named GeTeC). First, several physico-chemical, optical and electrical analyses have been performed on full-sheet chalcogenide depositions in order to understand the intrinsic GeTeC phase-change behavior, and to characterize structure and composition of amorphous...
Low-frequency noise in PCM devices is experimentally investigated providing a new physical model for the amorphous GST (Ge2Sb2Te5) material. Noise intensity is characterized and modelled as a function of bias, temperature and size. Findings from 1/f noise analysis are used to understand the drift mechanism of the amorphous state resistance.
We characterize SET operation in Phase Change Memories. A measurement procedure aiming to investigate resistance transition from amorphous to crystalline states is shown. Results give interesting insights on the crystallization process of GST material and a simple model is introduced. Crystallization process obeys to a constant energy law. Fast SET pulses require high power; slow SET pulses can be...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.