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The systematic investigation of the role played by electrons and holes during the erase operation of TANOS memories by means of charge separation experiments and physics-based simulations is reported for the first time. We determined a dominance of electrons back-tunneling in the first part of the transient, and dominance of holes in the second part. Good agreement is reached between experimental...
NROM memory cells are proposed as promising nonvolatile memories. Even though these devices should have a better endurance than their floating-gate counterparts, issues have risen due to the presence of both electrons and holes, for the control of their relative position and spread in the charge-trapping material. Thus, a deep knowledge of charge distribution features is crucial for program/erase...
NROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling and endurance have risen due to the presence of both electrons and holes for the control of their relative position and spread in the charge trapping material. In this paper, we present a new characterization tool able to sense charge distribution features in different program/erase conditions that...
NROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling and endurance have risen due to the presence of both electrons and holes, for the control of their relative position and spread in the charge trapping material. Therefore, a deeper analysis of the injected-charge distribution region is very important for program/erase bias optimization, reliability...
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