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NROM memory cells are proposed as promising nonvolatile memories. Even though these devices should have a better endurance than their floating-gate counterparts, issues have risen due to the presence of both electrons and holes, for the control of their relative position and spread in the charge-trapping material. Thus, a deep knowledge of charge distribution features is crucial for program/erase...
NROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling and endurance have risen due to the presence of both electrons and holes for the control of their relative position and spread in the charge trapping material. In this paper, we present a new characterization tool able to sense charge distribution features in different program/erase conditions that...
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