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In this paper, large grain polycrystalline silicon films on glass substrates have been fabricated at a low temperature of 350°C. The amorphous silicon (a-Si:H) films deposited by plasma-enhanced chemical vapor (PECVD) were transformed to polysilicon films by using nano-aluminum induced crystallization (AIC) at a low temperature. Effect of the annealing time on the grain size and crystalline phase...
In this study, the structural transformation and properties of five commercially available poly(silsesquioxanes) by thermal curing were investigated, including poly(hydrogen silsesquioxanes) (HSQ and T12), and poly(methylsilsesquioxanes) (MSQ, T7 and T9). These materials with a different cage/network ratio and side groups (Si-H and Si-CH 3 ). The FTIR spectra show that the poly(silsesquioxane)...
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