The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The application of MEMS to the measurement of pressure is a mature application of micromachined silicon mechanical sensors. The present paper describes the design and simulation of surface micromachined piezo resistive type pressure sensor for enhanced sensitivity. The principle of the sensing mechanism is based on the deflection of sensing silicon nitride diaphragm. In order to achieve better sensor...
We have carried out 3D Non-Equilibrium Green Function simulations of a junctionless gate-all-around n-type silicon nanowire transistor of 4.2 × 4.2 nm2 cross-section. We model the dopants in a fully atomistic way. The dopant distributions are randomly generated following an average doping concentration of 1020 cm-3. Elastic and inelastic Phonon scattering is considered in our simulation. Considering...
Statistical variability associated with discreteness of charge and granularity of matter is one of limiting factors for CMOS scaling and integration. The major MOSFET statistical variability sources and corresponding physical simulations are discussed in detail. Direct statistical parameter extraction approach is presented and the scalability of 6T and 8T SRAM of bulk CMOS technology is investigated...
High performance silicon nanoporous membranes have been developed to investigate the feasibility of an implantable bioartificial kidney. The nanoscale pore size is defined by the thickness of a sacrificial layer of silicon dioxide (SiO2), which is grown by thermal oxidation down to 5 nm with 1% variation. Standardized test protocols to examine biocompatibility revealed that silicon and related MEMS...
The rapid progress in microsystems technology is increasingly supported by various modeling methodologies and simulation tools. A coupled-field analysis procedure is established to analyze a multi-degree of freedom accelerometer. The proposed sensor dimensions are 1.5times1.5times0.5 mm3 (LtimesWtimesT) and the beam size is 950times80times10 mum3 (LtimesWtimesT). The effect of electrical heating in...
The quantitative evaluation of the impact of key sources of statistical variability (SV) are presented for LP nMOSFETs corresponding to 45 nm, 32 nm and 22 nm technology generation transistors with bulk, thin body (TB) SOI and double gate (DG) device architectures respectively. The simulation results indicate that TBSOI and DG are not only resistant to random dopant induced variability, but also are...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.