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We have carried out 3D Non-Equilibrium Green Function simulations of a junctionless gate-all-around n-type silicon nanowire transistor of 4.2 × 4.2 nm2 cross-section. We model the dopants in a fully atomistic way. The dopant distributions are randomly generated following an average doping concentration of 1020 cm-3. Elastic and inelastic Phonon scattering is considered in our simulation. Considering...
Statistical variability associated with discreteness of charge and granularity of matter is one of limiting factors for CMOS scaling and integration. The major MOSFET statistical variability sources and corresponding physical simulations are discussed in detail. Direct statistical parameter extraction approach is presented and the scalability of 6T and 8T SRAM of bulk CMOS technology is investigated...
The quantitative evaluation of the impact of key sources of statistical variability (SV) are presented for LP nMOSFETs corresponding to 45 nm, 32 nm and 22 nm technology generation transistors with bulk, thin body (TB) SOI and double gate (DG) device architectures respectively. The simulation results indicate that TBSOI and DG are not only resistant to random dopant induced variability, but also are...
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