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A novel algorithm for a reduction of the computational burden associated to the time-dependent simulation of quantum transport with pure states is presented. The algorithm is based on using the superposition principle and the analytical knowledge of the free timeevolution of an initial state outside of the active region, together with absorbing layers. It is specially suited to study (many-particle...
The aim of this work is to show the dependence of the time dependent current of gate-all-around transistors on their geometries and thus to find out how to optimize their intrinsic AC behavior. The Ramo-Shockley-Pellegrini (RShP) theorem and many-particle Monte Carlo technique are used, through the recently developed BITLLES simulator which is devoted to simulate classical and quantum electronic devices,...
With the aim of manufacturing faster and smaller devices, the electronic industry is today entering into the nanoscale and the high frequency regimes. In this particular scenario, the dynamics of the electron charge becomes affected by quantum mechanical laws, both, for its spatial or temporal description. We have recently shown that Bohmian trajectories allow a direct treatment of the time-dependent...
Power dissipation constitutes a major constriction in modern and future nanoelectronic design [1]. In this context, predictive models elucidating new criterions to control Joule heating would be valuable. In this work we reveal how an accurate formulation of the many-body Coulomb correlations among carriers can lead to new perspectives on the design of power-optimized electron devices. In particular,...
With the aim of manufacturing faster and smaller devices, the electronic industry is today approaching both the nano and the picosecond scales. In this particular scenario, electron dynamics becomes strongly correlated both in space and time. We have recently shown that Bohmian trajectories allow a direct treatment of the time-dependent many-particle interaction among electrons with accuracy comparable...
The main goal of this work is to study the effect of the structure geometries on the time dependent current in the nano electronic devices. The Ramo-Shockley-Pellegrini theorems are used together with many-particle Monte Carlo simulator to study this problem. In particular, it is shown that when the lateral surfaces (Ly, Lz) where the total current is collected are decreased, while keeping the longitudinal...
A discussion about the accurate computation of the total time-dependent (conduction plus displacement) current in quantum and classical devices is presented. In particular, two different methods for the practical computation of the total time-dependent current are compared. The first method computes the conduction and the displacement currents from the rate of particles crossing a particular surface...
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