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This paper presents measured, simulated and calculated third-order intercept point (IP3) on a 90-nm RF CMOS technology. The IP3 sweet spot is actually at a VGS lower than zero K 3gm point. This VGS difference is attributed to the nonlinear output conductance and the cross terms using a Volterra-series-based IP3 expression. The impact of these nonlinearities is quantified using simulated I-V and...
This paper presents experimental characterization and modeling of intermodulation linearity in a 200 GHz SiGe HBT technology. The impact of biasing current, voltage, and breakdown voltage is examined. IP3 is simulated using the VBIC, HICUM and Mextram model to evaluate the linearity capability of these models. The impact of avalanche and self-heating on IIP3 are examined. A weak avalanche is shown...
Intermodulation linearity of CMOS transistors obtained from device level harmonic balance simulation is compared to that obtained using I-V data and good agreement between the two approaches is observed. Linearity is simulated as a function of channel length and oxide thickness. The impact of poly-gate depletion effect on linearity is also analyzed
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