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A novel SiGe-S/D structure for high performance pMOSFET called two-step recessed SiGe -source/drain (S/D) is developed with careful optimization of recessed SiGe-S/D structure. With this method, hole mobility, short channel effect and S/D resistance in pMOSFET are improved comparing with conventional recessed SiGe-S/D structure. To enhance device performance such as drain current drivability, SiGe...
We present the FinFET process integration technology including improved sidewall transfer (SWT) process applicable to both fins and gates. Using this process, the uniform electrical characteristics of the ultra-small FinFETs of 15nm gate length and 10 nm fin width have been demonstrated. A new process technique for the selective gate sidewall spacer formation (spacer formation only on the gate sidewall,...
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