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In this paper, we derive an analytical model of drain current for an Undoped 4-T asymmetric double gate MOSFET based on the solution of the 1D Poisson's equation. The equations are valid for both the subthreshold and superthreshold regime of operation. The current is formulated using the Pao-Sah's double integral method. The model can be used to study the effect of the different gate voltages, gate...
We have developed analytically a threshold voltage model and explored the threshold voltage roll-off and drain-induced barrier lowering (DIBL) effects for undoped surrounding-gate (SG) MOSFETs. The model is derived by applying the Gauss law by considering an elemental area of the channel rather than using Poisson equation as implemented earlier. For this threshold voltage model, the threshold voltage...
We have developed an analytical subthreshold drain current model along with subthreshold swing for surrounding gate (SG MOSFET) MOSFETs. The model is derived from direct use of the Gaussian law rather than using Poisson equation as has been implemented earlier. The models for current and swing have been verified by comparison with 3-D numerical results for different channel lengths, channel thickness...
An analytical subthreshold surface potential model for Dual Material Gate MOSFET including the effect of inner fringing field is presented, considering surface potential variation with the depth of the channel depletion layer. A pseudo two dimensional method is adopted and a more accurate prediction of surface potential including the fringing field effect is reported.
An analytical and accurate subthreshold surface potential model for short channel Conventional, LAC & double halo including the effect of inner fringing field is presented, considering the surface potential variation with the depth of the channel depletion layer. With this the drawback of existing models, the assumption of a constant channel depletion layer thickness is removed. A pseudo two dimensional...
An analytical subthreshold surface potential model for dual-material gate MOSFETs, which considers a varying depth of the channel depletion layer due to the difference in Hatband voltages, and also due to the depletion layers around the source/drain junctions, is presented. The model predictions are compared with the predictions by the 2-D numerical device simulator DESSIS, and a very good agreement...
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