Serwis Infona wykorzystuje pliki cookies (ciasteczka). Są to wartości tekstowe, zapamiętywane przez przeglądarkę na urządzeniu użytkownika. Nasz serwis ma dostęp do tych wartości oraz wykorzystuje je do zapamiętania danych dotyczących użytkownika, takich jak np. ustawienia (typu widok ekranu, wybór języka interfejsu), zapamiętanie zalogowania. Korzystanie z serwisu Infona oznacza zgodę na zapis informacji i ich wykorzystanie dla celów korzytania z serwisu. Więcej informacji można znaleźć w Polityce prywatności oraz Regulaminie serwisu. Zamknięcie tego okienka potwierdza zapoznanie się z informacją o plikach cookies, akceptację polityki prywatności i regulaminu oraz sposobu wykorzystywania plików cookies w serwisie. Możesz zmienić ustawienia obsługi cookies w swojej przeglądarce.
The presence of interface states at the MOS interface is a well-known cause of device degradation. This is particularly true for ultrascaled FinFET geometries where the presence of a few traps can strongly influence the device behavior. Typical methods for interface trap density (D_it) measurements are not performed on ultimate devices but on custom-designed structures. We present the first set of...
The mobility and, more generally, the transport parameters of MOS devices are key quantities for the performance evaluation in advanced CMOS technologies. In this work, a review of the main mobility results obtained in short channel devices (here GAA/DG, FD-SOI MOSFETs and FinFETs) are presented and discussed for better understanding their transport limitations and, in turn, their performances.
Source/drain formation in ultra-thin body devices by conventional ion implantation is analyzed using atomistic simulation. Dopant retention is dramatically reduced by backscattering for low-energy and low-tilt angles, and by transmission for high angles. For the first time, molecular dynamics and kinetic Monte Carlo simulations, encompassing the entire Si body, are applied in order to predict damage...
Vt-mismatch, and thus SRAM scalability, is greatly improved in narrow SOI FinFETs, with respect to planar bulk, because of their undoped channel and near-ideal gate control. We show by simulations and by measurements that in FinFETs, unlike planar bulk, beta-mismatch becomes dominant, leading to radically different SRAM characteristics. By careful process tuning, we demonstrate a substantial reduction...
In this work, we have compared different FB-RAM architectures. Whereas highly doped PDSOI devices show high programming window and retention times for long channel devices, the SOI FinFET devices with WFIN=25 nm can be scaled down to LG=50 nm while still maintaining high cell margins and retention times. For the latter devices optimization of the write and especially read bias conditions is needed.
Scaling the fin width in fully-depleted FinFETs can improve short channel effect control, but may be accompanied by a on-state drive current degradation. Ion implantation is a leading candidate as the means to introduce dopants into the silicon, but is often accompanied by amorphization when highly doped source-drain regions are formed. Thin-body silicon recrystallization after amorphization is not...
Podaj zakres dat dla filtrowania wyświetlonych wyników. Możesz podać datę początkową, końcową lub obie daty. Daty możesz wpisać ręcznie lub wybrać za pomocą kalendarza.