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It is shown that laser sensitivity mapping at the cell level can be used to reconstruct and analyze the SEE cross-section. It resolves such conundrums as data pattern variations in the SEE sensitivity of memories. The pattern of SEE sensitivity revealed by the laser maps is shown to be reflected in features of ion beam test data.
High-resolution images of neutron-induced transient upsets in charge-coupled devices (CCDs) are analysed as an analogue of single-event upsets (SEEs) in memory devices. In particular, we investigate the relationship between the mean and variance of the event size distribution in the CCD images. Over the range of upset thresholds of practical interest a consistent form for this relationship is observed...
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