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A unique testing approach based on error-pattern identification with a graphical mapping and color-coding of the full SDRAM memory during single-event characterization is proposed. Results about unique SEFI modes and the role of temperature are discussed.
An advanced 0.13 μm SOI Microprocessor was tested for its sensitivity to heavy ions and protons, and compared with a previous generation 0.18 μm version tested with the same methodology. Even though the overall error rates were somewhat comparable, the 0.13 μm version experienced a significantly higher frequency of processor functional error lock-up (hang).
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