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This paper will present the findings of work performed on 20-micron diameter copper wire of five different wire types from three suppliers with gold wire added as a control. The test die was mounted on BT resin substrates. The bonding parameters were optimized for each wire used. Part of the optimization process involved monitoring the flatness of the bonded ball and the amount of aluminum remaining...
Because of Moore's (scaling/integration) law, the Cu/low-k silicon chip is getting bigger, the pin-out is getting higher, and the pitch is getting finer. Thus, the conventional organic buildup substrates cannot support these kinds of silicon chips anymore. To address these needs, Si interposer with TSV has emerged as a good solution to provide high wiring density interconnection, to minimize CTE mismatch...
Recently there have been several developments in the areas of small form factor and high-density lead frame based IC packages. These packages have the benefits of occupying smaller PC board area, lower assembly material consumption due to their smaller volume package construction, and good thermal dissipation properties. Another area of recent development in packaging integration is system in package...
Cu bonding has been making a wave in the IC packaging industry due to the combined efforts of wire, capillary and wirebonder manufacturers. The present challenge in copper bonding resides in minimizing the aluminium squeeze of the aluminium metallization of bond pads. This demands the copper ball to possess a lower yield stress for reduced energy to deform. In this article the methods that are adopted...
The integration of stacked dice into convention packaging formats provides a promising capability in reducing the cost, weight and size of the package while increasing the overall functionality of the system. It has been well accepted as enabling approach for smaller handheld devices such as cellular phones and digital camera. Among the various process steps in the packaging of these devices, wire...
Failure analysis (FA) is a critical element in integrated circuit (IC) manufacturing. As IC advances and new materials are introduced in the semiconductor process, some conventional FA techniques cannot be applied. This paper presents a novel FA technique for IC packages with copper wire. It is a low cost and time efficient dry etching technique, where microwave induced plasma (MIP) is utilized to...
Wire bonding is an important method of interconnection in microelectronics. The micro welding of the contact pad to the gold wire is achieved by a thermosonic wire bonding process. Ultrasonic energy is known to soften metallic materials and hence when used in the wire bond process to decrease the flow stress similar to thermal energy. But experimental results shows for some lead frame designs neck...
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