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InP nanowire arrays have been grown and optimized using selective area epitaxy by metalorganic chemical vapour deposition technique. High quality stacking fault free wurtzite nanowires with a wide range of diameters and room temperature minority carrier lifetime as high as ∼ 1.6 ns have been obtained. An axially doped n-i-p structure was further grown and successfully fabricated into solar cell devices...
A systematic growth temperature study has been performed to achieve high quality InP nanowires (NWs) by selective-area metal-organic vapour-phase epitaxy (SA-MOVPE). The optical quality of these nanowires was evaluated from time-resolved photoluminescence (TRPL) at 300 K.
To explore the growth mechanism and the effect of non-gold catalysts in growing III–V epitaxial nanowires, InAs nanowires were grown on GaAs(111)B substrates using annealed Pd thin film as catalyst. Through detailed scanning and transmission electron microscopy (SEM/TEM) characterisations, it is found that when the catalyst size is less than 50 nm (from annealing the Pd thin film), defect-free zinc-blende...
Two different Au catalysts were used to grow GaAs epitaxial nanowires on GaAs (111)B substrates. Detailed investigations have shown that using Au thin film and annealing technique, it is possible to achieve nanowire growth with much higher density comparing to using Au nanoparticles. It is found that the tapering and lattice defects normally observed in nanowires induced by Au nanoparticles were reduced...
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VLS mechanism. In this paper, I will give an overview of nanowire research activities in our group.
We report a two-temperature procedure for the growth of GaAs nanowires by metalorganic chemical vapour deposition. An initial high temperature step affords effective nucleation and promotes epitaxial growth of straight (111)B-oriented nanowires. Lower temperatures are employed subsequently, to minimise nanowire tapering during growth.
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