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This paper presents an 8-elements phased array receiver front-end in 45nm CMOS technology. The receiver uses a 4-bit resolution RF phase shifter to compensate for the free-space propagation delay and an active eight-to-one power combiner enabling beam-forming. Each path shows more than 15.8dB of power gain with <0.5 dB of RMS gain variation for all 16 phase settings over the 3-dB gain bandwidth...
A novel, highly efficient out-phasing amplifier with adaptive power combiner is presented. Saturated class-F operation is used for the amplifier cells. Varactor tuning is applied to make the output power combining network adaptive. Use of optimum input drive conditions and output varactor tuning, to eliminate imaginary loading introduced by the out-phasing principle, yields an amplifier efficiency...
A wideband modulator for a 20 MHz bandwidth polar modulated PA is presented which achieves a maximum efficiency of 87.5% and a small signal -3 dB bandwidth of 285 MHz. Realized in 65 nm CMOS, it consists of a cascoded nested Miller compensated linear amplifier and a class D switching amplifier. It can deliver 22.7 dBm output power to a 5.3 Omega load. With a switching frequency of 118 MHz, the output...
The paper presents a highly miniaturized front end module (FEM) for GSM. The module consists of pure silicon BiCMOS RF power amplifier (PA) chip, a BiCMOS die for bias/control functions and a pHEMT switch die, all flipped on a passive integration die, which is mounted on an organic laminate substrate. All passives are integrated. Partitioning of passives is optimized to achieve minimum size (6times6times1...
Very compact yet efficient UWB antennas are created by utilising the ground plane of a transceiver's PCB as the antenna, which is coupled to the transceiver via a notch antenna element. Optimisation of the notch antenna geometry permits the maximum amount of PCB area to be used for circuitry, thus reducing the overall size of transceiver plus antenna.
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