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This paper describes device modeling of FeS2 thin-film solar cells by device simulation to investigate the cause of 0% conversion efficiency from the reported device structure. We demonstrated that the reported device didn't form a suitable structure as a photovoltaic device. In order to achieve FeS2 photovoltaic device, we suggested that obtaining not only suitable band structure but also suitable...
This paper describes unseeded growth of poly-crystalline Ge with well-oriented large-size grains on insulator from amorphous Ge by scanning pulsed green laser annealing. The Ge was patterned to 2-µm-wide stripes and then annealed by laser irradiation. The annealed Ge stripes were crystallized with well-oriented (111) surface and the grain size was 2 µm wide and ∼10 µm long, where the maximum length...
Iron pyrite, FeS2 is a semiconductor that has attention as next generation material for solar cells. We reported the evaluation of band structure and the conductivity of FeS2 thin film toward a realization of FeS2 heterojunction solar cells. FeS2 thin film was prepared by spin-coating. The pyridine solution which included Iron(III) acetylacetonate was utilized as a precursor ink and the precursor...
Thermoelectric properties of a-IGZO thin film were optimized by adjusting the carrier concentration. We found that the power factor (PF) has the maximum value of 82 × 10−6 W / mK2 at 300 K, where the carrier density was 7.70 × 1019 cm−3. Additionally, measured data was analyzed by fitting the percolation model. Theoretical analysis revealed that the Fermi level is located on right over the potential...
In order to reduce the back-contact silicon solar cell manufacturing process cost, polysilazane solution is used to form SiO2 diffusion barrier layer in this study. The thickness and refractive index of SiO2 film is evaluated by spectroscopic ellipsometer measurement. Sheet resistance measurement and SIMS measurement revealed that polysilazane-derived SiO2 layer presents excellent barrier effect for...
CO2 laser was irradiated to per-hydro-polysilazane by us. Per-hydro-polysilazane as SiO2 precursor was spin-coated on the polycrystalline silicon substrate. CO2 laser was irradiated after prebaking Per-hydro-polysilazane film. Atomic force microscope analysis showed that the film after CO2 laser irradiation was formed flatly. Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy...
Al2O3 thin films were deposited by plasma-assisted atomic layer deposition (PA-ALD), which can have the advantage of low temperature process. Then high pressure deuterium oxide annealing (HPDOA) was performed for reforming qualities of the PA-ALD Al2O3. The leakage current and the breakdown field of metal-oxide-semiconductor capacitors with the Al2O3 film as the gate insulator were improved after...
We investigated a quick patterning using gel-nanoimprint process for zinc oxide (ZnO) thin films. The X-ray diffraction measurement revealed that the ZnO films had wurtzite structure by annealing in the ambient air or oxygen. The ZnO film annealed in oxygen exhibited higher refractive index of 1.92 (at 720 nm for wavelength of light) which is close to that of a conventional ZnO film, whereas that...
The metal-induced lateral crystallization (MILC) of an amorphous Ge (a-Ge) thin film using Cu nanoparticles (NPs) was investigated. Cu-NPs were formed by a cage-shaped protein. After complete elimination of protein shell, crystal growth was performed at 300 °C. Raman spectra and TEM studies revealed that a poly-Ge film was formed at low temperature. The crystallization temperature depends on the metal-NP...
We investigated a quick patterning using a gel-nanoimprint process for zinc oxide (ZnO) thin films. The X-ray diffraction measurement revealed that the ZnO thin films had wurtzite structure by annealing in the ambient air or oxygen. The ZnO thin film annealed in oxygen exhibited higher refractive index of 1.92 (at 720 nm for wavelength of light) which is close to that of a conventional ZnO thin film,...
We fabricated highly reliable a-InGaZnO thin film transistors (TFTs) with new silicon nitride (SiNX) gate insulator (GI) fabricated by SiF4/N2 at low temperature (150°C). This new SiNX layer has low hydrogen content which is controlled by the source gases, and hydrogen gas flow rate ratio to SiF4 was changed as 0%, 1%, and 8% to change the hydrogen content in the film. The bias-stress-induced threshold...
We investigated zinc oxide (ZnO) thin films prepared by plasma assisted atomic layer deposition (PA-ALD), and thin-film transistors (TFTs) with ALD ZnO channel layer for application in next-generation displays. In this study, we investigated the effects of the gate insulator properties on the performance of TFTs with a ZnO channel layer deposited by PA-ALD. The TFTs with Al2O3 gate insulator indicated...
We performed crystallization of an amorphous silicon by laser irradiation in flowing deionized-water where Nd: YAG THG laser (wave length = 355 nm) was used for annealing. As the results, we demonstrated that the underwater laser annealing (WLA) leads to giant- and uniform-grain growth as compared to laser annealing in air (LA). It is thought that the homogenization of the temperature distribution...
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