The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We demonstrate a novel technique for monolithic integration of enhancement and depletion-mode AlGaN/GaN HEMTs using CF4 plasma treatment. Direct-coupled FET logic circuits such as an E/D HEMT inverter and a 17-stage ring oscillator are demonstrated in GaN system for the first time. At a supply voltage (VDD)of 1.5V, the fabricated E/D inverter shows an output logic swing of 1.25V, logic-low noise margin...