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In gate recess etching of a 0.1 /spl mu/m gate HEMT process, an anomalous phenomenon caused by electrochemical etching was found. The isolation region implanted with oxygen ion was etched more deeply than the channel region, which caused a non-flat etched surface. This anomaly affects device performance and its uniformity seriously. We suppressed the anomaly by optimizing the condition of the isolation...
A phase-shifter edge line (PEL) mask method is applied to the gate fabrication process of InGaAs/AlGaAs pseudomorphic inverted high electron mobility transistors (HEMTs). In phase-shifting technologies, the PEL mask method suits forming a fine line pattern owing to its high resolution. Mushroom shaped 0.2 μm gate pseudomorphic inverted HEMTs fabricated by using the PEL mask method show high d.c....
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