Search results for: H. I. Fujishiro
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We have improved the performances of InP-based HEMTs and MMICs for terahertz-wave wireless communications using a high frequency carrier wave around 300 GHz in an R&D program launched by the Ministry of Internal Affairs and Communications, Japan (MIC). Furthermore, we also have developed GaN and InSb-based HEMTs in another research. In this paper, we demonstrated the performances of InP, GaN and...
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We investigate the effects of the strain on the performances in the nano-scale HEMTs with the InAs and the InAs-related channels. The drain current, Ids, and the intrinsic transconductance, gm0, increase as the In content, x, in the channel increases, which is because of the decrease of the effective mass, m*, in the G valley. This indicates the superiority of the InAs channel in terms of the current...
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We theoretically investigate the mechanism of the electron rebound from the drain into the channel and its impact on the drain current in the nano-scale InGaAs MOSFETs by using the quantum corrected Monte Carlo (MC) simulation. The electrons almost ballistically transport in the channel at the gate length, Lg, of 10 nm. However the electron rebound becomes pronounced instead when the electrons degenerate...
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We calculate the unstrained and the strained band structures of InAs and InSb by means of the empirical pseudopotential method. The impact ionization threshold energy, Eth, is calculated while keeping the energy and momentum conservation. Then the electron transport in the unstrained and the strained InAs and InSb is investigated by using the Monte Carlo (MC) method. In both InAs and InSb, the average...
article
Solid State Electronics > 1995 > 38 > 9 > 1631-1634
A phase-shifter edge line (PEL) mask method is applied to the gate fabrication process of InGaAs/AlGaAs pseudomorphic inverted high electron mobility transistors (HEMTs). In phase-shifting technologies, the PEL mask method suits forming a fine line pattern owing to its high resolution. Mushroom shaped 0.2 μm gate pseudomorphic inverted HEMTs fabricated by using the PEL mask method show high d.c....
