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AlInAs/InGaAs HEMTs with different gate lengths, ranging from 0.2 to 1.0 ??m, and on different layer structures were fabricated. The DC- and HF-characteristics were systematically investigated before and after the passivation with PECVD Si3N4. The passivation resulted in an increase in parasitics such as the feedback capacitance (Cgd) and the drain delay time, leading to a slight degradation of the...
Two types of HEMT transistors with 0.2 μm gatelength have been fabricated: pseudomorphic (PM) on GaAs and lattice matched (LM) on InP. An extensive study of the DC and HF-characteristics shows the higher potential of the InP-based devices: extrinsic fT-values up to 141 GHz were obtained. The monolithic integration of the InP LM HEMT's is illustrated by the performance of a coplanar distributed amplifier.
A Plasma Enhanced Chemical Vapour Deposited (PECVD) silicon nitride assisted process has been successfully used to fabricate 0.1-μm gate-length planar-doped AlGaAs/InGaAs/GaAs pseudomorphic High Electron Mobility Transistors (HEMT's). Excellent d.c. and microwave performances are achieved by these devices, demonstrating the suitability of the process for fabricating ultrashort gate length devices...
We present a coordinated experimental and theoretical investigation of the parameter evolution of ultra-short gate HEMTs down to 0.1??m gate-length, and of the physical and electrical limitations to performance improvements. The study encompasses a broad range of well qualified situations allowing comparisons with previous investigations[1-4]. The main features are,- the exploitation of two reliable...
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