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In this work, an unconventional approach for epitaxial growth of Si on single-crystalline rare-earth oxide is presented using molecular beam epitaxy under ultra-high vacuum. Surface and bulk crystalline structures as well as chemical content were examined. Silicon-on-insulator layers were fabricated by encapsulated solid phase epitaxy on Si(111) substrate. The gadolinium oxide capping layer was removed...
We investigate molecular beam epitaxial overgrowth of Si template layers produced by different approaches on single-crystalline oxide grown on Si(111). Three approaches based on modified solid-phase epitaxy were found to be suitable for the subsequent Si epitaxial overgrowth. The crystalline quality and interface properties of single-crystalline silicon on single-crystalline oxide grown on Si(111)...
Experimental results for crystalline Gd2O3-based MOS capacitors show that these layers are excellent candidates for application as very thin high-K materials replacing SiO2 in future MOS devices. First electrical characteristics of n- and p-type SOI-MOSFETs with epitaxial Gd2O3 demonstrate the general feasibility of this novel gate insulator, but thermal stability during typical CMOS annealing processes...
Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 ??m CMOS technology. We present results for crystalline gadolinium oxides on silicon in the cubic bixbyite structure grown by solid source molecular beam epitaxy. On Si(100), crystalline Gd2O3 grows usually as (110)-oriented domains, with two orthogonal in-plane orientations...
In this work we show that by efficiently exploiting the growth kinetics during molecular beam epitaxy (MBE) one could create Si nanostructures of different dimensions. Examples are Si quantum dots (QD) or quantum wells (QW), which are buried into an epitaxial rare-earth oxide, e.g. Gd 2 O 3 . Electrical measurements carried out on Pt/Gd 2 O 3 /Si MOS capacitors comprised...
This paper presents experimental work on studying the detailed structure and strain relaxation of nanometer thick Nd2O3 films epitaxially grown on Si(111) substrates using molecular beam epitaxy (MBE). Investigations by various diffraction methods demonstrate that the Nd2O3 layers exhibit a well-ordered cubic bixbyite structure with a single orientation, perfect crystallinity and a sharp interface...
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