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Direct growth of graphene by industrially scalable methods on suitable dielectric substrates is critical to the development of practical electronic and spintronic devices. Graphene growth by molecular beam epitaxy on the commensurate substrate h-BN(0001) and on other weakly interacting substrates has previously been demonstrated. We have been able to use MBE to grow graphene on incommensurate Co3O4(111),...
We have directly grown monolayer and few layer graphene on h-BN(0001), MgO(111), and Co3O4(111) by a variety of methods, including chemical or physical vapor deposition (CVD, PVD), or molecular beam epitaxy (MBE). Such capability is critical to the development of graphene charge- and spin-based devices. In each case, the interactions of graphene with the substrate give rise to distinct graphene properties...
X-ray photoelectron spectroscopy was used to study the effect of atomic oxygen on Ru(0001), and the effect of dissociated ammonia on RuO 2 /Ru(0001), in UHV conditions at ambient temperature. The Ru(0001) surface was exposed, at ambient temperature, to a mixed flux of atomic and molecular oxygen generated by dissociation of O 2 in a thermal catalytic cracker, with ∼45% dissociation...
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