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Experimental gate capacitance (Cg) versus gate voltage data for InAs0.8Sb0.2 quantum-well MOSFET (QW-MOSFET) is analyzed using a physics-based analytical model to obtain the quantum capacitance (CQ) and centroid capacitance (Ccent). The nonparabolic electronic band structure of the InAs0.8Sb0.2 QW is incorporated in the model. The effective mass extracted from Shubnikov-de Haas magnetotransport measurements...
In this paper the influence of Gate Insulator Engineering (GIE) on the electronic transport of AlGaN/GaN MISHFET (Metal Insulator Semiconductor Heterostructure Field Effect Transistor) is investigated using ATLAS-3D device simulator and presented as an optimization tool for microwave applications. Important transport characteristics viz. channel potential and electric field are evaluated and interpreted...
An accurate non linear charge-control model of the two dimensional electron gas (2-DEG) of an insulated gate AlGaN/GaN HFET is proposed which incorporates the dominant effect of polarization induced charge at the AlGaN/GaN interface. It is based on new polynomial dependence of sheet carrier density on position of quasi Fermi level to consider the quantum effects and to validate it from sub threshold...
The gate dielectric engineering of MISHFET structure offers superior performance over conventional HFETs in terms of high power handling capacity as well as high gain characteristics. The closed form analytical model for different gate dielectric schemes has been formulated by taking into account the effect of nonlinear polarization, which plays very important effect in AlGaN/GaN material system....
A 2- dimensional analytical sub-threshold model for exploring the novel features of AlGaN/GaN gate material engineered (GME) high electron mobility transistor (HEMT) for reduced short channel effects (SCE) and enhanced carrier transport efficiency (CTE) is proposed. The model accurately predicts the channel potential and electric field (EF) of the conventional and GME HEMT structures. In GME HEMT,...
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