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Photoelectrical mechanism of single Indium Oxide nanowires have been investigated using current-voltage characteristics measurements varying with temperature. The fabricated In2O3 nanowires show high photosensitivity up to 140 at room temperature. It is shown that the photosensitivity of In2O3 nanowires decreases by increasing the temperature due to shorter carrier life time, higher dark conductance...
A 20nm thick Ni resistor element was fabricated on a 1µm thick, 400µm wide silicon nitride bridge via bulk micromachining. By applying a given power to the resistor its temperature increases, as the pressure decreases, since fewer gas particles are available to transfer heat away from the resistor. Rather than sensing the resistance change, a thin film thermocouple consisting of 20nm Ni and 20nm Cr...
Computational analysis on the emission properties of ZnO nano wires (NWs) and coreshell quantum dots (QDs) have been made by considering the effects of scattering mechanism of the incident field and the total electric field from the surface of varied substrates. Simulation results indicate that the substrate (GaAs) having the highest emission intensity showed maximum light scattering from its surface...
MEMS-based Pirani gauges consisting of 20 nm/200 nm Cr/Au meander-shaped resistor elements have been fabricated on 1 µm thick silicon nitride diaphragms. The distances d from the resistor elements to the cold junctions were 54, 340, and 1200 µm. The 54 µm device operates in a pressure range from about 0.05 to 5 Torr and the 1200 µm device from 0.003 to 0.3 Torr. By connecting the two devices in series,...
The hydrogen sensitivity of the reverse current in silver-rutile Schottky diode is investigated. Sample devices were prepared by the partial sintering of silver particles on thermally oxidized titanium foil. The device exhibited Schottky-type current-voltage characteristics in the 200 to 400degC operating temperature range in clean air. The high sensitivity and wide dynamic range observed for hydrogen...
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