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A novel memory cell for phase-change memories (PCMs) that enables low-power operation has been developed. Power (i.e., current and voltage) for the cell is significantly reduced by inserting a very thin Ta2O5 film between GeSbTe (GST) and a W plug. The Ta2O5 interfacial layer works not only as a heat insulator enabling effective heat generation in GST but also as an adhesion layer between GST and...
We demonstrated the operation of phase-change memory cells that enabled 1.5-V/100-muA programming through a tungsten-bottom-electrode contact with a diameter of 180 nm. This is the lowest power ever reported. This was achieved with oxygen-doped GeSbTe, and resulted from the high electric resistance of the germanium oxides in this material. Germanium oxides were also estimated to restrain the growth...
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