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We report the first ferroelectric (FE) HfZrOx (HZO) Ge and GeSn pMOSFETs with sub-60 mV/decade subthreshold swing (SS) (40∼43 mV/decade), negligible hysteresis, and enhanced Ids. With a RTA at 450 oC, FE devices with reduced hysteresis of 40∼60 mV demonstrate the significantly improved SS and Ids characteristics compared to control devices without FE, owing to the negative capacitance (NC) effect...
Here we show the effects of N,N-Dimethylformamide (DMF) incorporation in the MAI/IPA precursor on the crystallization process of perovskite film based on MAI/IPA precursor. Perovskite thin films were prepared by the two-step solution deposition. With the incorporation of DMF in the MAI/IPA precursor, the device performance can be enhanced effectively, especially for the short-circuit current density...
High crystal quality ultrathin Ge and Ge0.96Sn0.04 channels are epitaxially grown on SOI and Si bulk, respectively, and high mobility pMOSFETs are fabricated. Low-temperature Si2H6 passivation of Ge and GeSn is utilized to form a high quality SiO2/Si interfacial layer between the high-κ dielectric and channels, leading to a substantial reduction of Dit. Ge and GeSn pMOSFETs achieve the improved μeff...
This work investigates the impacts of biaxial tensile strain and surface orientation on performance of GeSn pTFET. Multi-bands k • p method is used to calculate the band structure of biaxially tensile strained GeSn on various orientations. The electrical characteristics of tensile strained GeSn line- and point-pTFETs are computed implementing the dynamic nonlocal BTBT algorithm. Our simulation demonstrates...
We fabricated relaxed Ge0.97Sn0.03 pTFETs on Si(001). The devices show much higher ION than SiGe, Ge, and compressively strained GeSn planer pTFETs in literatures. For the first time, ION enhancement in GeSn pTFET utilizing uniaxial strain is reported. By applying 0.14% uniaxial tensile strain along channel direction, Ge0.97Sn0.03 [110] pTFETs achieve ∼ 10% ION improvement, over relaxed devices at...
We developed process flow for GeSn pMOSFET fabrication with in situ low temperature Si2H6 passivation module. High performance Ge0.96Sn0.04 pMOSFETs were fabricated. At a Qmv of 6×1012 cm−2, a 24% enhancement in μeff is demonstrated in Ge0.96Sn0.04 pMOSFETs compared to Ge control.
We demonstrate high performance undoped Ge0.92Sn0.08 quantum well (QW) pMOSFETs with in situ Si2H6 passivation on (001), (011) and (111) orientations. (011) and (111)-oriented Ge0.92Sn0.08 QW pFETs achieve higher on-state current ION and effective hole mobility μeff compared to (001) devices. Ge0.92Sn0.08 (111) QW pFETs demonstrate a record high μeff of 845 cm2V−1s−1 for GeSn p-channel devices (Fig...
Considering current matching of the subcells, the optimized active layer thicknesses are obtained for structures of ITO/PEDOT:PSS/P3HT:PCBM/ZnO/PED-OT:PSS/pBBTDPP2:PCBM/Al (normal) and ITO/PED-OT:PSS/pBBTDPP2:PCBM/ZnO/PEDOT:PSS/P3HT:P-CBM/Al (reverse) by detailed optical simulations, respectively. Because of the different layer sequences and material properties, it is observed that the normal structure...
In this study, conventional and inverted organic solar cells (OSC and IOSC) based on the bulk heterojunction blend of poly (3-hexylthiphene):[6,6]-phenyl C61 butyric acid methyl ester (P3HT:PCBM) are investigated from optical aspect. The results show that when the active layer thickness of both OSC and IOSC is added, the number of photons absorbed in active layer and EQE tend to increase with the...
A new type of crystal seed, polycrystalline Ge (poly-Ge) formed by Co induced crystallization was used in the rapid-melting-growth (RMG) of Ge. With the poly-Ge seed, the grain size of Ge films obtained was significantly larger than the one using single crystal epitaxial Si as crystal seed and the one without any crystal seed. High quality (almost single crystal) Ge was obtained on 1 mm × 1 mm square...
In this paper, the mechanisms of the bulk heterojunction organic solar cells for improved energy conversion efficiency are investigated and reviewed. Based on these mechanism understandings, a simple tandem structure design is thus proposed and demonstrated, which shows the promising performance.
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